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Power Transistors
2SD1611
Silicon NPN triple diffusion planar type darlington
Unit: mm
For power amplification Features
* High forward current transfer ratio hFE * High collector-base voltage (Emitter open) VCBO * N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.00.3 1.50.1
8.50.2 6.00.2
3.40.3 1.00.1
4.40.5
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25C Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Rating 500 400 5 6 10 40 1.3 150 -55 to +150
Unit V V V A A W C C B
(6.5)
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
Electrical Characteristics TC = 25C 3C
Parameter Emitter-base voltage (Collector open) Collector-emitter sustaining voltage
*
Symbol VEBO ICBO hFE VCE(sat) VBE(sat) fT
Conditions IE = 0.1 A, IC = 0 VCB = 350 V, IE = 0 VCE = 2 V, IC = 2 A IC = 3 A, IB = 0.06 A IC = 3 A, IB = 0.06 A VCE = 10 V, IC = 1 A, f = 1 MHz
Min 5 400
Typ
Max
(7.6)
E Unit V V 100 500 1.5 2.5 15 A V V MHz
VCEO(SUS) IC = 2 A, L = 10 mH
Collector-base cutoff current (Emitter open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: VCEO(SUS) Test circuit 50 Hz/60 Hz L 120 6V 1 15 V G X
Y
(1.5)
Absolute Maximum Ratings TC = 25C
1
2
0.80.1 R = 0.5 R = 0.5 2.540.3 1.00.1 1.40.1 0.40.1 5.080.5 (8.5) (6.0) 1.3 3
2.00.5
4.40.5
0 to 0.4
14.40.5
3.0+0.4 -0.2
1.5+0 -0.4
Publication date: April 2003
SJD00206BED
1
2SD1611
PC Ta
80
(1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)Without heat sink (PC=1.3W)
5 TC=25C IB=8mA
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
100
VCE(sat) IC
IC/IB=50
Collector power dissipation PC (W)
4
Collector current IC (A)
60
10
25C
3
40
(1)
4.0mA 3.5mA 3.0mA 2.5mA 2.0mA
1
TC=100C -25C
2
20
0.1
1 1.5mA
(2)
(3)
0
0
40
80
120
160
0 0 1 2 3 4 5 6
0.01 0.01
0.1
1
10
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
100
IC/IB=50
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
105
VCE=2V
Cob VCB
104
IE=0 f=1MHz TC=25C
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
10
104
103
TC=-25C
1
25C
100C
103
102
TC=100C
0.1
102
25C -25C
10
0.01 0.01
0.1
1
10
10 0.01
0.1
1
10
1 0.1
1
10
100
Collector current IC (A)
Collector current IC (A)
Collector-base voltage VCB (V)
Safe operation area
100
Non repetitive pulse TC=25C
Rth t
103
(1)Without heat sink (2)With a 50x50x2mm Al heat sink (1) (2)
Collector current IC (A)
10
ICP IC t=300ms t=10s t=1ms
Thermal resistance Rth (C/W)
102
10
1
1
0.1
10-1
0.01
1
10
100
1000
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00206BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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